| Номер произв | IRF244 | ||||
| Описание | 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs | ||||
| Производители | Intersil Corporation | ||||
| логотип | |||||
1Page
January 1998 IRF246, IRF247 N-Channel Power MOSFETs • 14A and 13A, 275V and 250V • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • High Input Impedance Operation - TB334 “Guidelines for Soldering Surface Mount Ordering Information PACKAGE IRF244 IRF244 TO-204AA IRF246 IRF246 TO-204AA NOTE: When ordering, include the entire part number. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from Formerly developmental type TA17423. D S DRAIN JEDEC TO-204AA SOURCE (PIN 2) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. 5-1
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 8.8 ±20 1.0 Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . TL Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .Tpkg -55 to 150 260 250 13 52 125 550 300 IRF246 275 8.8 ±20 1.0 -55 to 150 260 275 13 52 125 550 UNITS V A V W/oC oC 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified SYMBOL MIN TYP MAX UNITS IRF244, IRF245 (Figure 10) - IRF246, IRF247 - Gate to Threshold Voltage On-State Drain Current (Note 2) VGS(TH) VGS = VDS, ID = 250µA VDS = 0.8 x Rated VGS 0V, 2.0 - 4.0 - - 25 µA 14 - A 13 - A Drain to Source On-State Resistance (Note 2) IGSS VGS = ±20V - - ±100 nA IRF245, IRF247 Forward Transconductance (Note 2) Rise Time Fall Time (Gate to Source + Gate to Drain) Gate to Drain “Miller” Charge 6.7 10 td(ON) td(OFF) (Figures 17, 18) MOSFET Switching Times Temperature - 16 24 53 80 Qg(TOT) Qgd BVDSS, Ig(REF) = 1.5mA, Essentially Independent of Operating - 39 59 - 20 - ns ns nC nC
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL MIN TYP MAX UNITS Output Capacitance Internal Drain Inductance Junction to Case CISS VGS = 0V, VDS = 25V, f = 1.0MHz - 1300 - pF CRSS pF - 5.0 - the Flange that is Closer to Source and Inductances D LD Source Lead, 6mm (0.25in) From the LS Source Bonding Pad nH RθJC Free Air Operation - - 30 oC/W PARAMETER Pulse Source to Drain Current SYMBOL ISD Modified MOSFET ISM Integral Reverse G MIN TYP MAX UNITS - - 56 A Source to Drain Diode Voltage (Note 2) Reverse Recovered Charge trr TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13) - 1.8 150 300 640 1.6 3.4 7.2 tON Intrinsic Turn-On Time is Negligible, Turn-On - - - NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25Ω, peak IAS = 14A. See Figures 15, 16. ns - | |||||
| Всего страниц | 7 Pages | ||||
| Скачать PDF | [ IRF244.PDF Даташит ] | ||||
IRF244 Datasheet PDF - Intersil Corporation
Type: n-channel Drain-to-Source Breakdown Voltage: 55 V Gate-to-Source Voltage, max: ±20 V; Drain-Source On-State Resistance, max: 17.5 mΩ Continuous Drain Current: 41 A Total Gate Charge: 42 nC Power Dissipation: 83 W Package: TO-220AB. Simple voltage regulator using IRFZ44N and 5OK potentiometer, regulate DC volt, adjustable 1.2 to 39V diy DC power supply,FB page: https://www.facebook.com/E. About Press Copyright Contact us Creators Advertise Developers Terms Privacy Policy & Safety How YouTube works Test new features Press Copyright Contact us Creators. IRF244 N-Channel Power MOSFET Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic.
| Part Number | IRF244 | |
| Description | 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs | |
| Manufacturers | Intersil Corporation | |
| Logo | ||
There is a preview and IRF244 download ( pdf file ) link at the bottom of this page. Total ( 7 pages ) | ||
Preview 1 page No Preview Available ! Make bootable usb in mac. January 1998 IRF246, IRF247 N-Channel Power MOSFETs • 14A and 13A, 275V and 250V • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • High Input Impedance Operation - TB334 “Guidelines for Soldering Surface Mount Ordering Information PACKAGE IRF244 IRF244 TO-204AA IRF246 IRF246 TO-204AA NOTE: When ordering, include the entire part number. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from Formerly developmental type TA17423. D S DRAIN JEDEC TO-204AA SOURCE (PIN 2) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. 5-1 |
Typical Performance Curves Unless Otherwise Specified (Continued) 80µs PULSE TEST 10V 15 10 5 4.0V 0 2 46 8 FIGURE 6. SATURATION CHARACTERISTICS 100 80µs PULSE TEST TJ = 150oC TJ = 25oC 0 2468 FIGURE 7. TRANSFER CHARACTERISTICS 2.5 2.0 VGS = 10V ID = 14A 2.4 1.0 1.2 VGS = 20V 0 ID, DRAIN CURRENT (A) GATE VOLTAGE AND DRAIN CURRENT 75 -60 -40 -20 0 20 40 60 80 100 120 140 160 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON 1.25 1.15 0.95 0.75 TJ, JUNCTION TEMPERATURE (oC) VOLTAGE vs JUNCTION TEMPERATURE 2400 CISS CISS = CGS + CGD COSS ≈ CDS + CGD 600 CRSS VDS, DRAIN TO SOURCE VOLTAGE (V) 5-5 Preview 5 Page |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRF244.PDF Datasheet ] | |
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